2N3487 GP BJT
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- 10 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.2@0.3mA@3mA | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 7.5 | A |
| Maximum Power Dissipation | 115000 | mW |
| Type | NPN |