2N3498 GP BJT
Datasheet: View
Stock
- 109 MOTOROLA
- 1 NATIONAL SEMICONDUCTOR
- 1566 NEW JERSEY SEMICONDUCTOR
- 1 RF POWER
- 45 SEMICOA
- 2 SOLID STATE TRANSISTOR
- 5 SOLITRON
- 6 TELEDYNE
- 15 TRANSITRON
- 9 WALBERN
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@1mA@10mA|0.6@30mA@300mA | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | NPN |