2N3499 GP BJT
Datasheet: View
Stock
- 2 ELECTRONIC TRANSISTOR
- 63 MOTOROLA
- 13 NATIONAL SEMICONDUCTOR
- 1610 NEW JERSEY SEMICONDUCTOR
- 24 TELEDYNE
- 411 TRANSITRON
- 21 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@1mA@10mA|0.6@30mA@300mA | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | NPN |