2N3506 GP BJT
Datasheet: View
Stock
- 1 MOTOROLA
- 6856 NEW JERSEY SEMICONDUCTOR
- 4 SOLID SATE
- 18 SOLITRON DEVICES
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 1@50mA@500mA|1.3@150mA@1.5A|2@250mA@2.5A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | NPN |