2N3529 GP BJT

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  • 5002 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 150V 3-Pin TO-39

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Saturation Voltage 0.4@0.15A V
Maximum Collector Emitter Voltage 150 V
Maximum Emitter Base Voltage 6 V
Maximum Transition Frequency 150(Min) MHz
Type NPN