2N3564 GP BJT

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  • 1 ADVANCED SEMI
  • 7929 FAIRCHILD
  • 8 GENERAL INSTRUMENT
  • 1232 MEH
  • 10 NATIONAL SEMICONDUCTOR
  • 10039 NEW JERSEY SEMICONDUCTOR
  • 76 SOLID STATE TRANSISTOR
  • 463 TELEDYNE
  • 3 WATKINS JOHNSON
  • 2 WORLD WIDE

Trans GP BJT NPN 40V 0.5A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.25@15mA@150mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 350 mW
Maximum Transition Frequency 600 MHz
Type NPN