2N3567 GP BJT

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Stock

  • 111 CARSON
  • 3 FAIRCHILD
  • 111 GENERAL INSTRUMENT
  • 253 NATIONAL SEMICONDUCTOR
  • 10248 NEW JERSEY SEMICONDUCTOR
  • 20 RAYTHEON
  • 1 SOLID STATE TRANSISTOR
  • 150 TELEDYNE
  • 105 TELEDYNE SEMI
  • 64 WORLD WIDE

Trans GP BJT NPN 40V 0.5A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.25@15mA@150mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 350 mW
Maximum Transition Frequency 600 MHz
Type NPN