2N3569A GP BJT

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  • 19 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 0.5A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.25@15mA@150mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 350 mW
Maximum Transition Frequency 600 MHz
Type NPN