2N3576 GP BJT

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  • 1303 NATIONAL SEMICONDUCTOR
  • 3693 NEW JERSEY SEMICONDUCTOR
  • 2 RAYTHEON
  • 475 SIEMENS
  • 100 SOLID STATE TRANSISTOR
  • 21 TEXAS INSTRUMENT

Trans GP BJT NPN 15V 3-Pin TO-18 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Maximum Collector Base Voltage 20 V
Maximum Collector Emitter Saturation Voltage 0.5@100mA V
Maximum Collector Emitter Voltage 15 V
Maximum Emitter Base Voltage 5 V
Maximum Transition Frequency 400(Min) MHz
Type NPN