2N3583 GP BJT

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  • 382 GENERAL ELECTRIC
  • 48 MOTOROLA
  • 10427 NEW JERSEY SEMICONDUCTOR
  • 2 RCA
  • 20 SILICON TRANSISTOR CORP
  • 2 SOLID STATE TRANSISTOR
  • 3 WORLD WIDE

Trans GP BJT NPN 175V 5A 3-Pin(2+Tab) TO-66 Sleeve

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Features Values Unit
Category Bipolar Power
Material Si
Maximum Collector Base Voltage 250 V
Maximum Collector Emitter Saturation Voltage 5@125mA@1A V
Maximum Collector Emitter Voltage 175 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 35000 mW
Maximum Transition Frequency 10(Min) MHz
Type NPN