2N3634 GP BJT
Datasheet: View
Stock
- 5 ADVANCED SEMI
- 65 MOTOROLA
- 33 NATIONAL SEMICONDUCTOR
- 9298 NEW JERSEY SEMICONDUCTOR
- 315 SOLID STATE TRANSISTOR
- 1 TRANSITRON
- 77 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 140 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@1mA@10mA|0.6@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 140 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | PNP |