2N3636 GP BJT
Datasheet: View
Stock
- 29 MOTOROLA
- 5297 NEW JERSEY SEMICONDUCTOR
- 1 RF POWER
- 125 SOLID DEVICES
- 23 TELEDYNE
- 4 TRANSITRON
- 1 WORLD WIDE
Trans GP BJT PNP 175V 1A 3-Pin TO-39
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 175 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@1mA@10mA | 0.6@5mA@50mA |
| Maximum Collector Emitter Voltage | 175 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | PNP |