2N3637 GP BJT

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  • 469 FAIRCHILD
  • 554 MOTOROLA
  • 25 NATIONAL SEMICONDUCTOR
  • 16072 NEW JERSEY SEMICONDUCTOR
  • 2 RCA
  • 2 TELEDYNE
  • 5 WORLD WIDE

Trans GP BJT PNP 175V 1A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 175 V
Maximum Collector Emitter Saturation Voltage 0.3@1mA@10mA|0.6@5mA@50mA V
Maximum Collector Emitter Voltage 175 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type PNP