2N3638 GP BJT

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Stock

  • 130 AMELCO
  • 136 FAIRCHILD
  • 15 GENERAL INSTRUMENT
  • 17 INTERMETALL
  • 1 MOTOROLA
  • 1512 NATIONAL SEMICONDUCTOR
  • 46621 NEW JERSEY SEMICONDUCTOR
  • 6 SOLID SATE
  • 19 SOLID STATE TRANSISTOR
  • 22 TELEDYNE
  • 58 TELEDYNE CRYSTALONICS
  • 13800 TELEDYNE SEMI
  • 2 WORLD WIDE

Trans GP BJT PNP 175V 1A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 175 V
Maximum Collector Emitter Saturation Voltage 0.3@1mA@10mA|0.6@5mA@50mA V
Maximum Collector Emitter Voltage 175 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type PNP