2N3644 GP BJT

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  • 4 ELECTRONIC TRANSISTOR
  • 13 FAIRCHILD
  • 9284 NEW JERSEY SEMICONDUCTOR
  • 9 SIGNETICS
  • 19 SOLID STATE TRANSISTOR

Trans GP BJT NPN 30V 0.5A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.22@15mA@150mA V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 125 °C
Maximum Power Dissipation 350 mW
Maximum Transition Frequency 250(Min) MHz
Type NPN