2N3660 GP BJT

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  • 2050 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 30V 1.5A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.2@0.05mA@0.5mA V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 1.5 A
Maximum Power Dissipation 5000 mW
Type PNP