2N3676 GP BJT

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  • 1028 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 90V 3A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.8@0.1mA@1mA V
Maximum Collector Emitter Voltage 90 V
Maximum DC Collector Current 3 A
Maximum Power Dissipation 8700 mW
Type NPN