2N3691 GP BJT
Datasheet: View
Stock
- 1204 CARSON
- 4261 FAIRCHILD
- 2737 GENERAL INSTRUMENT
- 872 NATIONAL SEMICONDUCTOR
- 18192 NEW JERSEY SEMICONDUCTOR
- 4900 RAYTHEON
- 3301 TELEDYNE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 175 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@1mA@10mA|0.6@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 175 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | PNP |