2N3700 GP BJT
Datasheet: View
Stock
- 98 INTERMETALL
- 3 MOTOROLA
- 10 NATIONAL SEMICONDUCTOR
- 38367 NEW JERSEY SEMICONDUCTOR
- 8 RAYTHEON
- 33 TELEDYNE
- 19 TRANSITRON
- 13 WESTINGHOUSE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 140 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@15mA@150mA|0.5@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 500 | mW |
| Type | NPN |