2N3706 GP BJT

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  • 9680 INTERMETALL
  • 8 MICROSEMI CONDUCTOR
  • 357 NATIONAL SEMICONDUCTOR
  • 4842 NEW JERSEY SEMICONDUCTOR
  • 20 RF POWER
  • 27 SPRAGUE
  • 13903 TEXAS INSTRUMENT

Trans GP BJT NPN 20V 0.8A 3-Pin TO-92 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 1@5mA@100mA V
Maximum Collector Emitter Voltage 20 V
Maximum DC Collector Current 0.8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 100(Min) MHz
Type NPN