2N3710 GP BJT

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  • 222 NATIONAL SEMICONDUCTOR
  • 22605 NEW JERSEY SEMICONDUCTOR
  • 9306 SPRAGUE
  • 185 TEXAS INSTRUMENT

Trans GP BJT NPN 30V 0.2A 3-Pin TO-92 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 1@0.5mA@10mA V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 0.2 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Type NPN