2N3710 GP BJT
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Stock
- 222 NATIONAL SEMICONDUCTOR
- 22605 NEW JERSEY SEMICONDUCTOR
- 9306 SPRAGUE
- 185 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.5mA@10mA | V |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Type | NPN |