2N3711 GP BJT
Datasheet: View
Stock
- 1040 NATIONAL SEMICONDUCTOR
- 18159 NEW JERSEY SEMICONDUCTOR
- 4 NUCLEAR PRODUCTS CORP
- 39 SIEMENS
- 103 SPRAGUE
- 540 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.5mA@10mA | V |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Type | NPN |