2N3720 GP BJT
Datasheet: View
Stock
- 4 ELECTRONIC TRANSISTOR
- 12 MOTOROLA
- 2429 NEW JERSEY SEMICONDUCTOR
- 2 SILICON TRANSISTOR CORP
- 87 SOLITRON
- 4 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.75@100mA@1A|1.5@300mA@3A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Maximum Transition Frequency | 90(Typ) | MHz |
| Type | PNP |