2N3730 GP BJT

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  • 1 LTE
  • 10 NEW JERSEY SEMICONDUCTOR
  • 12 RCA

Trans GP BJT NPN 40V 1.5A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 75 V
Maximum Collector Emitter Saturation Voltage 0.2@1mA@10mA|0.3@15mA@150mA|0.5@50mA@500mA|0.9@100mA@1A V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type NPN