2N3737 GP BJT
Datasheet: View
Stock
- 3780 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 75 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@1mA@10mA|0.3@15mA@150mA|0.5@50mA@500mA|0.9@100mA@1A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 1.5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 500 | mW |
| Type | NPN |