2N3738 GP BJT
Datasheet: View
Stock
- 2 INDUSTRY SEMI
- 20 MOTOROLA
- 1865 NEW JERSEY SEMICONDUCTOR
- 5 SEMICOA
- 4 SILICON TRANSISTOR CORP
- 102 SOLID STATE TRANSISTOR
- 9 SOLITRON
- 3 TOMSON
- 4 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 2.5@0.025mA@0.1A | V |
| Maximum Collector Emitter Voltage | 225 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 20000 | mW |
| Type | NPN |