2N3739 GP BJT
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Stock
- 9 ADVANCED SEMI
- 652 MOTOROLA
- 2679 NEW JERSEY SEMICONDUCTOR
- 4 SILICON TRANSISTOR CORP
- 39 SOLID SATE
- 5 TRANSITRON
- 12 WORLD WIDE
Trans GP BJT NPN 300V 1A 3-Pin(2+Tab) TO-66
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 325 | V |
| Maximum Collector Emitter Saturation Voltage | 0.75@10mA@100mA | 2.5@25mA@250mA |
| Maximum Collector Emitter Voltage | 300 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 20000 | mW |
| Type | NPN |