2N3740 GP BJT
Datasheet: View
Stock
- 4 FAIRCHILD
- 57 MOTOROLA
- 13353 NEW JERSEY SEMICONDUCTOR
- 10 RF POWER
- 51 SILICON TRANSISTOR CORP
- 5 SOLID SATE
- 42 SOLID STATE TRANSISTOR
- 47 SOLITRON
- 42 TRANSITRON
- 19 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@125mA@1A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 25000 | mW |
| Maximum Transition Frequency | 4(Min) | MHz |
| Type | PNP |