2N3741A GP BJT

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  • 1089 NEW JERSEY SEMICONDUCTOR
  • 1 SOLITRON

Trans GP BJT PNP 80V 4A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.4@25mA@250mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 25000 mW
Type PNP