2N3749 GP BJT
Datasheet: View
Stock
- 4 BENDIX
- 206 NEW JERSEY SEMICONDUCTOR
- 4 TOMMORROW
- 4 TRANSITRON
- 1 UNITRODE
Trans GP BJT NPN 80V 5A 3-Pin TO-59
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 110 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@0.1A@1A | 1.5@0.5A@5A |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Type | NPN |