2N3764 GP BJT
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- 2 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.1@1mA@10mA|0.22@15mA@150mA|0.5@50mA@500mA|0.9@100mA@1A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 1.5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 500 | mW |
| Type | PNP |