2N3766 GP BJT

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Stock

  • 20 ADVANCED SEMI
  • 289 FAIRCHILD
  • 39 MOTOROLA
  • 11262 NEW JERSEY SEMICONDUCTOR
  • 1 SGS
  • 36 SILICON TRANSISTOR CORP
  • 5502 SOLID SATE
  • 7 SOLID STATE TRANSISTOR
  • 2 SOLITRON
  • 1 TOMMORROW
  • 3 TRANSITRON
  • 7 WALBERN

Trans GP BJT NPN 60V 4A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 2.5@0.1A@1A|1@0.05A@0.5A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 25000 mW
Type NPN