2N3767 GP BJT

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Stock

  • 1 ESE
  • 2 GENERAL SEMICONDUCTOR
  • 4 INTERNATIONAL DEVICES INC
  • 2 MOTOROLA
  • 7821 NEW JERSEY SEMICONDUCTOR
  • 1 SILICON TRANSISTOR CORP
  • 9 SOLID SATE
  • 11 SOLID STATE INC
  • 33 SOLID STATE TRANSISTOR
  • 4 SOLITRON
  • 6 TRANSITRON
  • 4 WESTINGHOUSE

Trans GP BJT NPN 80V 4A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100(Min) V
Maximum Collector Emitter Saturation Voltage 1@0.5A V
Maximum Collector Emitter Voltage 80(Min) V
Maximum DC Collector Current 4 A
Maximum Power Dissipation 20000 mW
Maximum Transition Frequency 10(Min) MHz
Type NPN