2N3772 GP BJT

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Stock

  • 11 ADVANCED POWER TECH
  • 8 AMPEREX
  • 5 API
  • 36 DIOTEK
  • 14 GENERAL ELECTRIC
  • 8 HARRIS
  • 29 HUGHES
  • 3 INTEGRATED POWER SEMI
  • 58 MOTOROLA
  • 15272 NEW JERSEY SEMICONDUCTOR
  • 58 ON SEMI
  • 2 PIRGO
  • 62 RCA
  • 7 SEMICOA
  • 2 SGS
  • 23 SIEMENS
  • 9 SILICONIX
  • 13 SILICON TRANSISTOR CORP
  • 44 SOLID SATE
  • 1 SOLID STATE DEVICES
  • 1 SOLID STATE TRANSISTOR
  • 7 SOLITRON
  • 6 TEXAS INSTRUMENT
  • 8 VORTEX
  • 8 WESTINGHOUSE

Trans GP BJT NPN 60V 20A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 1.2@1A@10A|4@4A@20A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 20 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 6000 mW
Type NPN