2N3772H GP BJT

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  • 1 API
  • 100 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 20A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 1.2@1A@10A|4@4A@20A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 20 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 6000 mW
Type NPN