2N3778 GP BJT

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  • 10667 NEW JERSEY SEMICONDUCTOR
  • 1 SILICON TRANSISTOR CORP
  • 5 WORLD WIDE

Trans GP BJT PNP 40V 1A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.2@0.04mA@0.2mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 1 A
Maximum Operating Temperature 125 °C
Maximum Power Dissipation 5000 mW
Type PNP