2N3796 GP BJT

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  • 385 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 60V 10A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1@0.5A@5A|2.5@2A@10A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 5000 mW
Type PNP