2N3799 GP BJT
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Stock
- 30 MOTOROLA
- 26 NATIONAL SEMICONDUCTOR
- 10010 NEW JERSEY SEMICONDUCTOR
- 33 RAYTHEON
- 30 SOLITRON
- 17 TEXAS INSTRUMENT
- 13 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@10uA@100uA|0.25@100uA@1mA | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 360 | mW |
| Maximum Transition Frequency | 80(Typ) | MHz |
| Type | PNP |