2N3810 GP BJT
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- 9 MOTOROLA
- 5 NATIONAL SEMICONDUCTOR
- 103 NEW JERSEY SEMICONDUCTOR
- 2 WORLD WIDE
Trans GP BJT PNP 60V 0.05A 6-Pin TO-78
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Dual | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@10uA@100uA | 0.25@100uA@1mA |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 350 | mW |
| Type | PNP |