2N3816 GP BJT

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  • 528 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 60V 0.05A 6-Pin TO-78

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Features Values Unit
Category Bipolar Power
Configuration Dual
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.2@10uA@100uA|0.25@100uA@1mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 0.05 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 350 mW
Type PNP