2N3817A GP BJT
Datasheet: View
Stock
- 659 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Dual | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@10uA@100uA|0.25@100uA@1mA | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 350 | mW |
| Type | PNP |