2N3839 RF BJT

Features	Values	Unit
Configuration	Single
Material	Si
Maximum Collector Base Voltage	30	V
Maximum Collector Emitter Voltage	15	V
Maximum DC Collector Current	0.04	A
Maximum Emitter Base Voltage	2.5	V
Maximum Operating Temperature	200	°C
Maximum Transition Frequency	2000	MHz
Minimum DC Current Gain	30@3mA@1V
Minimum Operating Temperature	-65	°C
Number of Elements per Chip	1
Output Power	0.03(Min)	W
Type	NPN