2N3868 GP BJT

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  • 12 API
  • 4 MOTOROLA
  • 4795 NEW JERSEY SEMICONDUCTOR
  • 17 SGS
  • 25 SILICON TRANSISTOR CORP
  • 14 UNITRODE

Trans GP BJT PNP 60V 3A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.5@50mA@500mA|0.75@150mA@1.5A|1.5@250mA@2.5A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type PNP