2N3868 GP BJT
Datasheet: View
Stock
- 12 API
- 4 MOTOROLA
- 4795 NEW JERSEY SEMICONDUCTOR
- 17 SGS
- 25 SILICON TRANSISTOR CORP
- 14 UNITRODE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@50mA@500mA|0.75@150mA@1.5A|1.5@250mA@2.5A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | PNP |