2N3878 GP BJT

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  • 155 API
  • 28 INTERNATIONAL DIODE
  • 5938 NEW JERSEY SEMICONDUCTOR
  • 4 RCA
  • 10 SILICON TRANSISTOR CORP
  • 4 WORLD WIDE

Trans GP BJT NPN 50V 7A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 2@0.4mA@0.5mA V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 7 A
Maximum Operating Temperature 125 °C
Maximum Power Dissipation 35000 mW
Type NPN