2N3879 GP BJT

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Stock

  • 1 ADVANCED POWER TECH
  • 13 API
  • 33 HARRIS
  • 5 KERTRON
  • 1565 NEW JERSEY SEMICONDUCTOR
  • 2 POWER PHYSICS CORP
  • 1 RCA
  • 6 SILICON TRANSISTOR CORP
  • 1 SNSITRON
  • 15 SOLID STATE TRANSISTOR
  • 3 SOLITRON
  • 5 UNITED TECHNOLIGIES
  • 10 WALBERN
  • 12 WORLD WIDE

Trans GP BJT NPN 75V 7A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 1.2@0.4A@4A V
Maximum Collector Emitter Voltage 75 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 35000 mW
Type NPN