2N389 RF BJT
Datasheet: View
Stock
- 8 CCI
- 1019 NEW JERSEY SEMICONDUCTOR
- 5 RAYTHEON
- 5 RF POWER
- 18 SARKED TARZIEN
- 34 SILICON TRANSISTOR CORP
- 268 TEXAS INSTRUMENT
- 166 TRANSITRON
- 5 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 1@10mA@100mA | V |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 0.4 | A |
| Maximum Emitter Base Voltage | 3.5 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 25@50mA@5V|8@360mA@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Output Power | 2 | W |
| Type | NPN |