2N3917 GP BJT

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  • 1004 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 2A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.2@0.1mA@1mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 2 A
Maximum Power Dissipation 20000 mW
Type NPN