2N3959 GP BJT

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  • 1052 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 12V

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 20 V
Maximum Collector Emitter Saturation Voltage 0.2@0.1mA@1mA 0.3@3mA@30mA
Maximum Collector Emitter Voltage 12 V
Maximum Emitter Base Voltage 4.5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 400 mW
Maximum Transition Frequency 1300(Min) MHz
Type NPN