2N3960 GP BJT
Datasheet: View
Stock
- 1 JS2
- 49 MOTOROLA
- 22097 NEW JERSEY SEMICONDUCTOR
- 8 RAYTHEON
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 20 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@0.1mA@1mA|0.3@3mA@30mA | V |
| Maximum Collector Emitter Voltage | 12 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 4.5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 400 | mW |
| Type | NPN |