2N3970 JFET

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  • 253 MOTOROLA
  • 2261 NATIONAL SEMICONDUCTOR
  • 57 NEW JERSEY SEMICONDUCTOR
  • 201 SILICONIX
  • 65 SILICONIX
  • 63 TELEDYNE SEMI
  • 57 TEXAS INSTRUMENT
  • 22 WORLD WIDE

Trans JFET 40V

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Features Values Unit
Configuration Single
Maximum Drain Gate Voltage 40 V
Maximum Drain Source Voltage 40 V
Maximum Gate Source Voltage 40 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 1800 mW
Minimum Operating Temperature -65 ᄀC